From 5a40b5fb2bb3a4d1c20149fe47ab25409026ee2e Mon Sep 17 00:00:00 2001 From: =?UTF-8?q?Rafa=C5=82=20Mi=C5=82ecki?= Date: Mon, 24 Dec 2012 17:34:29 +0100 Subject: [PATCH] mtd: bcm47xxnflash: increase NFLASH_READY_RETRIES MIME-Version: 1.0 Content-Type: text/plain; charset=UTF-8 Content-Transfer-Encoding: 8bit Recently imlemented writing support has shown that current num of retries is too low. Writing requires longer waiting than simple reading. Signed-off-by: Rafał Miłecki Signed-off-by: David Woodhouse --- drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c | 4 ++-- 1 file changed, 2 insertions(+), 2 deletions(-) diff --git a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c index 86c9a79b89b..595de4012e7 100644 --- a/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c +++ b/drivers/mtd/nand/bcm47xxnflash/ops_bcm4706.c @@ -17,8 +17,8 @@ #include "bcm47xxnflash.h" /* Broadcom uses 1'000'000 but it seems to be too many. Tests on WNDR4500 has - * shown 164 retries as maxiumum. */ -#define NFLASH_READY_RETRIES 1000 + * shown ~1000 retries as maxiumum. */ +#define NFLASH_READY_RETRIES 10000 #define NFLASH_SECTOR_SIZE 512